| 摘要 |
PROBLEM TO BE SOLVED: To provide a getter structure for dielectrically isolated wafer structure such as bonded wafer. SOLUTION: A getter layer is deposited on a wafer having semiconductor regions mutually isolated by trenches. The layer is etched back, and a layer of polysilicon is left along side walls of the semiconductor regions. The polysilicon may be doped. The polysilicon is oxidized and the polysilicon is deposited to fill voids in the trenches. COPYRIGHT: (C)2007,JPO&INPIT
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