| 摘要 |
PROBLEM TO BE SOLVED: To form a columnar electrode of a semiconductor device which is called CSP by a method other than plating. SOLUTION: A through hole 73 is made in a peeling layer 63 by punching, from above, an object where a low fusing point metal layer composed of solder or the like, a soft metal layer composed of lead or the like, a hard metal layer composed of copper or the like, a soft metal layer composed of lead or the like, and the low fusing point metal layer composed of solder or the like are stacked in this order on the peeling layer 63, and also the through hole 73 is filled with a punched piece 71 from the metal layers of the above five layers. Then, only the low fusing point metal (solder or the like) in the lowermost layer of the punched piece 71 is fused by heating by a heating plate 74 and pressurizing by a pressurizing plate 75, and the soft metal layer in the second layer from below out of the punched piece 71 is joined with the topside of the pad at the tip of a rewiring 38 through this fused solder or the like. Next, the peeling layer 63 is separated. Then, a columnar electrode composed of the metal layers of three layers in the middle out of the punched piece 71 is made. |
