| 摘要 |
<p>An immersion lithography device is provided to prevent pattern defects by removing bubbles causing light scattering on an immersion solution in order to improve a yield. A filter(10) removes impurities mixed in an immersion solution. A de-aeration portion(20) removes dissolved gas contained in the immersion solution supplied from the filter. An exposure portion(30) performs an exposure with respect to a wafer using the immersion solution supplied from the de-aeration portion. The exposure portion includes a lens, a chamber, and a wafer stage. The chamber receives the immersion solution supplied from the de-aeration portion. The wafer stage is installed at a bottom portion of the chamber. The lens and a wafer are positioned on the wafer stage. An exposure process for the wafer is performed by light transmitted through the immersion solution.</p> |
