发明名称 METHOD OF PRODUCTION OF HIGH-PURITY COPPER DISELENIDE AND INDIUM CuInSe2
摘要 FIELD: methods of synthesis of copper diselenide and indium CulnSe2; electronic engineering; production of solar cells for conversion of solar energy possessing low optical losses and high efficiency. ^ SUBSTANCE: proposed method of production of CulnSe2 includes loading the charge into reaction chamber, evacuation, sealing and heating. Used as charge is CulnSex at 4<=x<=8; heating is continued to Tmax=1000°C till complete decomposition into crystalline CulnSe2 and vitreous Se and setting of it in cold end of chamber whose temperature is maintained at Tmin<=25°C. Proposed method makes it possible to produce high-purity CulnSe2 at content of admixtures <=1.10-4 mass-%. CulnSe2 may be obtained in form of thin films, powder-like and monolithic. ^ EFFECT: facilitated procedure; low cost; enhanced ecological safety. ^ 1 dwg
申请公布号 RU2288303(C1) 申请公布日期 2006.11.27
申请号 RU20050118244 申请日期 2005.06.14
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "SANKT-PETERBURGSKIJ GOSUDARSTVENNYJ POLITEKHNICHESKIJ UNIVERSITET" (GOU SPBGPU) 发明人 BLINOV LEV NIKOLAEVICH;KLIMOVA ANNA MIKHAJLOVNA;TOLOCHKO OLEG VIKTOROVICH;MOKHAMMAD AREF KHASAN
分类号 C30B29/46;C01B19/00 主分类号 C30B29/46
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