| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce scaling, while preventing deterioration in accuracy due to aberrations of pattern. <P>SOLUTION: In a method for making a photomask, a mask pattern 5 is divided into two in the scanning direction of a scanner, and a first division pattern portion 10, consisting of a Levenson-type phase shift mask pattern, is formed in one divided region whereas a second division pattern portion 20, consisting of an auxiliary pattern type phase shift mask pattern, is formed in the other divided region, thus forming a photomask 1. In a first exposure process, the resist on a wafer is exposed at the first division pattern portion 10. In a second exposure process, the region exposed during the first exposure process is doubly exposed at the second division pattern portion 20. Deterioration in aberration can be prevented by the transfer of a scanner. Fine patterning can be attained, by performing double exposure of first and second division pattern portions and by employing Levenson type and auxiliary pattern type in combination. <P>COPYRIGHT: (C)2007,JPO&INPIT |
