| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently remove a protection film, foreign matters, etc. stuck to a trench side wall in the case of trench etching, after forming a trench when manufacturing a semiconductor device having a trench structure. SOLUTION: After forming the trench, it is washed using dilute hydrofluoric acid. Then, it is washed for 5 to 10 min using a mixed solution (60 to 80°C) of NH<SB>4</SB>OH:H<SB>2</SB>O<SB>2</SB>:H<SB>2</SB>O=0.1:1:5, washed for 5 to 10 min at normal temperature using dilute hydrofluoric acid of HF:H<SB>2</SB>O=1:100, and washed for 5 to 10 min using a mixed solution (50 to 80°C) of HCl:H<SB>2</SB>O<SB>2</SB>:H<SB>2</SB>O=1:1:6. Thereafter, when the depth of the trench is over 3μm, the trench is washed for 5 to 10 min using the mixed solution (60 to 80°C) of NH<SB>4</SB>OH:H<SB>2</SB>O<SB>2</SB>:H<SB>2</SB>O=0.1:1:5. COPYRIGHT: (C)2007,JPO&INPIT
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