发明名称 CVD-VORRICHTUNG MIT DIFFERENZIERT TEMPERIERTEM SUBSTRATHALTER
摘要 The invention relates to a device for depositing especially crystalline layers on an especially crystalline substrate, comprising a high-frequency heated substrate support from a conductive material on which the substrate is two-dimensionally supported, and which comprises a zone of higher conductivity. The system is specifically characterized in that the higher conductivity zone is associated with the surface of support of the substrate and substantially corresponds to the area occupied by the substrate. Further, the zone on which the substrate rests heats up more than the substrate surface surrounding the substrate.
申请公布号 DE50208423(D1) 申请公布日期 2006.11.23
申请号 DE2002508423 申请日期 2002.04.22
申请人 AIXTRON AG 发明人 KAEPPELER, JOHANNES
分类号 C23C16/458;C23C16/46;C30B25/10;C30B25/12 主分类号 C23C16/458
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