| 摘要 |
A nonvolatile ferroelectric memory device is provided to correct a randomly generated fail bit to be normal, by correcting a failed error code by comparing an odd numbered parity and an even numbered parity of a pair cell array with a parity of input data. A plurality of pair cell arrays comprises a parity cell including a first nonvolatile ferroelectric memory cell and a plurality of pair cells storing equal data in a pair of unit cells by including a second nonvolatile ferroelectric memory cell, and outputs plural odd numbered parity data and plural even numbered parity data. A fail cell correction part(90) outputs a parity generation signal generated by checking a parity of plural input/output data to the parity cell during a write operation mode, and blocks the output of corresponding parity data applied from a failed pair cell by comparing the plural odd numbered parity data and the plural even numbered parity data with the parity generation signal during a read operation mode.
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