| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve the interface property between a tungsten silicide layer and a polysilicon layer by performing an oxidation process after the tungsten silicide layer is formed. A tunnel oxide layer(12) and a first polysilicon layer(13) are sequentially formed on a substrate(11). A dielectric film(14), a second polysilicon layer(15) and a tungsten silicide layer(16) are formed on the resultant structure. An oxide layer(17) is then formed by performing an oxidation processing, after redundant silicon in the tungsten silicide layer is moved to the upper surface of the tungsten silicide layer.</p> |
