METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve hot carrier effect by using an ion diffusion barrier. A gate electrode(2) is formed on a semiconductor substrate(1). A predetermined pattern with a groove is formed at a side of the gate electrode. An aiming groove is formed from the side of the gate electrode to an LDD(Lightly Doped Drain) region by performing an etching process on the resultant structure using the predetermined pattern as an etch mask. An ion diffusion barrier is formed thereon. A first ion implantation is performed on the resultant structure. A spacer(5) is formed at the side of the gate electrode. A second ion implantation is performed on the resultant structure by using the spacer and the gate electrode as an ion implantation mask.