发明名称 |
Heating element CVD system and heating element CVD metod using the same |
摘要 |
A heating element CVD system and a heating element CVD method which are capable of forming a high quality polycrystalline silicon film (polysilicon film) as a device in the case of producing a silicon film by using a heating element CVD system. The heating element CVD system and the heating element CVD method heat and maintain the inner surface of the structure surrounding the space between the substrate holder and the heating element to be at least 200° C. or higher, preferably at least 350° C. or higher during the formation of the silicon film on the substrate.
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申请公布号 |
US2006254516(A1) |
申请公布日期 |
2006.11.16 |
申请号 |
US20060489522 |
申请日期 |
2006.07.20 |
申请人 |
KARASAWA MINORU;ISHIBASHI KEIJI;TANAKA MASAHIKO |
发明人 |
KARASAWA MINORU;ISHIBASHI KEIJI;TANAKA MASAHIKO |
分类号 |
C23C16/00;H01L21/205;C23C16/24;C23C16/44;H01L21/00;H01L21/306 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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