发明名称 Methode und Gerät zur Erstellung von optischen Näherungseffekt-Korrekturelementen für ein Maskenmuster in der Optischen Lithographie
摘要 A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference. <IMAGE>
申请公布号 DE602004002598(D1) 申请公布日期 2006.11.16
申请号 DE20046002598T 申请日期 2004.01.14
申请人 ASML MASKTOOLS B.V. 发明人 VAN DEN BROEKE, DOUGLAS;CHEN, JANG FUNG;LAIDIG, THOMAS;WAMPLER, KURT E.;HSU, DUAN-FU STEPHEN
分类号 G03F1/00;G03F1/36;G03F7/20;H01L21/027 主分类号 G03F1/00
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