发明名称 CHEMICAL MECHANICAL POLISHING END POINT DETECTION APPARATUS AND METHOD
摘要 Methods and apparatus for substantially continuously measuring the surface of a wafer during a polishing process are disclosed. According to one aspect of the present invention, an apparatus includes a wafer support table that supports a wafer, a polishing pad that polishes a surface of the wafer, and a polishing pad structure that rotates the polishing pad over the surface of the wafer. The apparatus also includes a measuring device which is capable of continuously measuring the surface of the wafer during polishing of the surface of the wafer.
申请公布号 US2006258263(A1) 申请公布日期 2006.11.16
申请号 US20060275715 申请日期 2006.01.25
申请人 NIKON PRECISION INC. 发明人 BARADA ANDREW H.;UEDA TAKEHIKO
分类号 B24B51/00;B24B1/00;B24B49/00 主分类号 B24B51/00
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