发明名称 |
Diode device and transistor device |
摘要 |
A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the outermost one reaches these relay diffusion layers, and then the outer guard ring portions. The width of the distance between the guard ring portions is shorter where the relay diffusion layers are provided. For the width of the relay diffusion layers, the depletion layer reaches the outer guard ring portions with a lower voltage than the conventional structure.
|
申请公布号 |
US7135718(B2) |
申请公布日期 |
2006.11.14 |
申请号 |
US20030369101 |
申请日期 |
2003.02.20 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
发明人 |
KITADA MIZUE;OHSIMA KOSUKE;KUNORI SHINJI;KUROSAKI TORU |
分类号 |
H01L29/76;H01L29/06;H01L29/423;H01L29/739;H01L29/78;H01L29/861;H01L29/872 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|