Method and apparatus for plasma processing

摘要

A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.