COMPOSITIONS FOR AND METHODS OF REDUCING/ELIMINATING SCRATCHES AND DEFECTS IN SILICON DIOXIDE CMP PROCESS,申请号KR20017012932-传众专利搜索

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发明名称	COMPOSITIONS FOR AND METHODS OF REDUCING/ELIMINATING SCRATCHES AND DEFECTS IN SILICON DIOXIDE CMP PROCESS
摘要
申请公布号	KR100643975(B1)	申请公布日期	2006.11.10
申请号	KR20017012932	申请日期	2001.10.10
申请人		发明人
分类号	C09K3/00	主分类号	C09K3/00
代理机构		代理人
主权项
地址

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