发明名称 |
Low temperature method for minimizing copper hillock defects |
摘要 |
A method of fabricating a copper interconnect on a substrate is disclosed in which the interconnect and substrate are subjected to a low temperature anneal subsequent to polarization of the interconnect and prior to deposition of an overlying dielectric layer. The low temperature anneal inhibits the formation of hillocks in the copper material during subsequent high temperature deposition of the dielectric layer. Hillocks can protrude through passivation layer, thus causing shorts within the connections of the semiconductor devices formed on the substrate. In one example, the interconnect and substrate are annealed at a temperature of about 200 ° C. for a period of about 180 seconds in a forming gas environment comprising hydrogen (5 parts per hundred) and nitrogen (95 parts per hundred).
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申请公布号 |
US2006252258(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20050122393 |
申请日期 |
2005.05.05 |
申请人 |
WU JUN;LEE WEN-LONG;NI CHYI-TSONG;LIN SHIH-CHI |
发明人 |
WU JUN;LEE WEN-LONG;NI CHYI-TSONG;LIN SHIH-CHI |
分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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地址 |
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