HIGH-POWER LIGHT EMITTING DIODE

摘要

The inventive light emitting diode comprises a substrate (1) and an epitaxial structure which is arranged thereon, provided with an n-p junction and comprises n- and p-type conductivity layers (2, 5) based on solid solutions of a group III metal nitrides Al_xIn_yGa_1-(x+y)N, (0=x=1, 0=0=1). Said light emitting diode also comprises metal bonding areas (6, 7) for the n- and p-type conductivity layers disposed on the side of the epitaxial layers at the level of a lower epitaxial n-type conductivity layer (2) and at the level of the top epitaxial p-type conductivity layer (5). Regions occupied by the metal bonding area (7) for the n-type conductivity layer (2) and regions occupied by the metal bonding area (6) for the p-type conductivity layer (5) are arranged along the section area of the light emitting diode in the form of successive areas in the projection on the horizontal section of the light emitting diode. The metal bonding area (7) for the n-type epitaxial structure is provided with sections embodied in the form of separate fragments arranged in cavities etched in the epitaxial structure to the n-type conductivity layer (2), wherein, in the projection on the horizontal section of the light emitting diode, the areas occupied by said fragments are surrounded on all sides thereof by the area occupied by the metal bonding area (6) for the p-type conductivity layer (5). The fragments of the metal bonding area (7) for the n-type conductivity layer (2) are electrically connected by means of metal busses (8) passing above the metal bonding area (6) for the p-type conductivity layer (5) along a dielectric material layer (9) applied to the sections of said bonding area (6) above which the metal busses (8) pass through.