发明名称 |
Methodology for deposition of doped SEG for raised source/drain regions |
摘要 |
A first gate structure and a second gate structure are formed overlying a semiconductor substrate. A first protective layer is formed overlying the first gate structure and an associate source drain region. A first epitaxial layer is formed overlying the second source drain prior to removal of the first protective layer.
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申请公布号 |
US2006252191(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20050120857 |
申请日期 |
2005.05.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KAMMLER THORSTEN;BIERSTEDT HELMUT;LUNING SCOTT D. |
分类号 |
H01L21/8234;H01L21/336;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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