PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A process for producing a semiconductor device, in which the performance of semiconductor element including a single-crystal semiconductor layer formed on an insulating substrate by transfer can be enhanced. There is provided a process for producing a semiconductor device having a single-crystal semiconductor layer superimposed on an insulating substrate, comprising the steps of injecting a peeling substance into a single-crystal semiconductor substrate to thereby form a peeling layer; through separation by the peeling layer, transferring part of the single-crystal semiconductor substrate onto an insulating substrate to thereby form a single-crystal semiconductor layer; forming a hydrogen-containing layer on at least one surface side of the single-crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer into the single-crystal semiconductor layer.