发明名称 |
PHOTODETECTING DEVICE |
摘要 |
A method of manufacturing a photodetecting device, by providing a first wafer that includes a photosensitive layer made of a semiconductor material and a second wafer that includes a circuit layer of electronic components, with one of the photosensitive layer or the circuit layer incorporating a field isolation layer; bonding the first and second wafers to form a structure comprising successively the circuit layer, the field isolation layer and the photosensitive layer; and forming electrically conductive vias to electrically connect the photosensitive layer to at least some of the electronic components of the circuit layer. Also, photodetecting devices prepared by these methods. |
申请公布号 |
EP1719179(A1) |
申请公布日期 |
2006.11.08 |
申请号 |
EP20040714396 |
申请日期 |
2004.02.25 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
DUPONT, FREDERIC;CAYREFOURCQ, IAN |
分类号 |
H01L27/146;H01L31/028;H01L31/0368;H01L31/18 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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