| 摘要 |
A CMOS semiconductor device is provided to block a leakage current without varying the density of well impurities, the width and depth of an isolation layer and a gate voltage by preventing a channel from being formed under the isolation layer. Impurities are implanted into a portion under an isolation layer(10) of a substrate to form a junction. A part of a gate pattern(150) crossing the isolation layer has a greater width than that of a part of the gate pattern crossing a well. At least a partial thickness of the lower part of the gate pattern crossing the isolation layer is undoped with impurities. The impurity-undoped layer has a thickness of 1/2 to 3/4 of the gate pattern.
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