发明名称 |
Tungsten polishing solution |
摘要 |
A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP solution has a static etch rate for removing the tungsten metal. A secondary oxidizer lowers the static etch rate of the tungsten CMP solution. The secondary oxidizer is selected from the group consisting of bromates and chlorates. Optionally the tungsten CMP contains 0 to 50 weight percent abrasive particles; and it contains a balance of water and incidental impurities.
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申请公布号 |
US7132058(B2) |
申请公布日期 |
2006.11.07 |
申请号 |
US20030350859 |
申请日期 |
2003.01.24 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
THOMAS TERENCE M.;DE NARDI STEPHAN;GODFREY WADE |
分类号 |
B24B37/00;C09K5/00;C09G1/02;C09K3/14;C23F3/00;H01L21/304;H01L21/306;H01L21/321 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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