| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent short between a storage node contact plug and a bit line by widening a contact hole using plural etch processes. A first interlayer dielectric(42) having a storage node contact plug(44) is formed on a substrate(40). A bit line(46) having a hard mask(48) is formed on the first interlayer dielectric. An insulating spacer(50) is formed at both sidewalls of the bit line and the hard mask. A second interlayer dielectric(52) and a hard mask layer(54) are sequentially formed on the resultant structure. By etching the hard mask layer, the second interlayer dielectric is exposed. The exposed interlayer dielectric is firstly etched by dry-etching and secondly etched by wet-etching, thereby forming a half contact hole of semicircular shape. A polysilicon spacer(58) is formed at sidewalls of the half contact hole. By etching the second interlayer dielectric, a storage node contact hole(60) is then formed to expose the contact plug.
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