MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase channel length and to reduce leakage current by simultaneously etching an oxide layer and a substrate using a recess mask of hole shape without forming a protrusion of horn shape. An isolation layer(12) is formed in a substrate(10) to define an active region. A recess mask(24) of hole shape is formed to expose a desired width of the isolation layer at a minor axis of the active region. A recess groove(26) is formed by etching simultaneously the exposed isolation layer and substrate using the recess mask. A gate insulating layer is formed on the resultant structure. A gate electrode is formed on the gate insulating layer to fill the recess groove.