发明名称 Verbundmaterial für Kühlkörper für Halbleiter und Herstellung
摘要 <p>A high-pressure vessel (30) is allowed to be in an initial state and a first chamber (44a) is disposed downward. Copper or copper alloy (22) is placed in the first chamber (44a), and SiC (20) is set in a second chamber (44b) . The high-pressure vessel (30) is tightly sealed, and then the inside of the high-pressure vessel (30) is subjected to vacuum suction through a suction pipe (48) Electric power is applied to a heater (42) to heat and melt the copper or copper alloy (22) in the first chamber (44a) . At a stage at which the molten copper (22) in the first chamber (44a) arrives at a predetermined temperature, the high-pressure vessel (30) is inverted by 180 degrees to give a state in which SiC (20) is immersed in the molten copper (22) . An impregnating gas is introduced into the high-pressure vessel (30) through a gas inlet pipe (50) to apply a pressure to the inside of the high-pressure vessel (30). Thus, SiC (20) is impregnated with the molten copper (22). The high-pressure vessel (30) is inverted by 180 degrees , and then the impregnating gas in the high-pressure vessel (30) is discharged through a gas outlet pipe (52), simultaneously with which a cooling gas is introduced into the high-pressure vessel (30) through the gas inlet pipe (50) to cool the high-pressure vessel (30). <IMAGE></p>
申请公布号 DE69835914(D1) 申请公布日期 2006.11.02
申请号 DE1998635914 申请日期 1998.02.13
申请人 NGK INSULATORS LTD. 发明人 ISHIKAWA, SHUHEI;MITSUI, TSUTOMU
分类号 C04B41/88;H01L23/373;C04B35/00;C04B41/51;C04B41/52;C22C1/10;C22C9/00;H01L21/48 主分类号 C04B41/88
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