| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of suppressing the generation of a foreign susbtance and an effect of the foreign susbtance to a sample. SOLUTION: The plasma treatment apparatus comprises a vacuum treatment vessel 2, a treatment gas introducing means 8 for introducing the treatment gas into the vacuum treatment vessel 2, a means 6 for making the treatment gas in a plasma state connected to a first high frequency power supply and applying high frequency energy to the treatment gas introduced into the vacuum treatment vessel, a sample mounting electrode 4 that mounts the sample on its top surface and holds it in the vacuum vessel, and a vacuum exhausting means 1 for exhausting the treatment gas in the vacuum treatment vessel. A plasma confining means 7 that bends the flow of the treatment gas by the vacuum exhausting means at the downstream side lower than the sample mounting surface of the mounting electrode, and diffuses it to the downstream side lower than the sample mounting surface of plasma is provided at the periphery side of the electrode 4 in the vessel 2. COPYRIGHT: (C)2007,JPO&INPIT
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