发明名称 |
SEMICONDUCTOR PHOTOELECTRODE, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR PHOTOELECTRODE AND LIGHT ENERGY CONVERTING DEVICE |
摘要 |
<p>A semiconductor photoelectrode is provided with a metal substrate having an uneven surface, and a semiconductor layer which is formed on a surface of the metal substrate and composed of a material having photocatalytic characteristics. Thus, light absorption efficiency is improved, and furthermore, charge recombination can be prevented.</p> |
申请公布号 |
WO2006114972(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
WO2006JP306465 |
申请日期 |
2006.03.29 |
申请人 |
NISSAN MOTOR CO., LTD.;OI, TAKASHI;IWASAKI, YASUKAZU;SAYAMA, KAZUHIRO |
发明人 |
OI, TAKASHI;IWASAKI, YASUKAZU;SAYAMA, KAZUHIRO |
分类号 |
C25B11/06;B01J23/30;B01J35/02;C25B1/04;H01L31/04;H01M14/00 |
主分类号 |
C25B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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