发明名称 SEMICONDUCTOR PHOTOELECTRODE, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR PHOTOELECTRODE AND LIGHT ENERGY CONVERTING DEVICE
摘要 <p>A semiconductor photoelectrode is provided with a metal substrate having an uneven surface, and a semiconductor layer which is formed on a surface of the metal substrate and composed of a material having photocatalytic characteristics. Thus, light absorption efficiency is improved, and furthermore, charge recombination can be prevented.</p>
申请公布号 WO2006114972(A1) 申请公布日期 2006.11.02
申请号 WO2006JP306465 申请日期 2006.03.29
申请人 NISSAN MOTOR CO., LTD.;OI, TAKASHI;IWASAKI, YASUKAZU;SAYAMA, KAZUHIRO 发明人 OI, TAKASHI;IWASAKI, YASUKAZU;SAYAMA, KAZUHIRO
分类号 C25B11/06;B01J23/30;B01J35/02;C25B1/04;H01L31/04;H01M14/00 主分类号 C25B11/06
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