MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to improve the operation characteristic of a semiconductor device by increasing the width of an active region. A pad oxide layer(12) is formed on a semiconductor substrate(10). A nitride layer pattern for etching a trench is formed on the pad oxide layer. The pad oxide layer exposed by the nitride layer pattern and a predetermined depth of the semiconductor substrate are etched by a tilt-etch process to form a first trench. A predetermined depth of the semiconductor substrate under the first trench is etched by a tile angle smaller than that of the first trench. The first trench and a second trench(18) are filled with an isolating oxide layer. The first trench has a tilted sidewall of 50~80 degrees, and the second trench has a tilted sidewall of 80~90 degrees.