发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
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申请公布号 |
US2006246684(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20060387854 |
申请日期 |
2006.03.24 |
申请人 |
HOSHI TAKESHI;KIYOTOSHI MASAHIRO;KAWASAKI ATSUKO |
发明人 |
HOSHI TAKESHI;KIYOTOSHI MASAHIRO;KAWASAKI ATSUKO |
分类号 |
H01L21/76;H01L21/8242 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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