发明名称 Method of manufacturing semiconductor device
摘要 A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
申请公布号 US2006246684(A1) 申请公布日期 2006.11.02
申请号 US20060387854 申请日期 2006.03.24
申请人 HOSHI TAKESHI;KIYOTOSHI MASAHIRO;KAWASAKI ATSUKO 发明人 HOSHI TAKESHI;KIYOTOSHI MASAHIRO;KAWASAKI ATSUKO
分类号 H01L21/76;H01L21/8242 主分类号 H01L21/76
代理机构 代理人
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