| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a driving current, while suppressing an increase in parasitic resistance in an MISFET using a high dielectric film as a gate insulating film. <P>SOLUTION: For example, a gate electrode 17 is provided on the surface of a semiconductor substrate 11 via the gate insulating film 15. The gate insulating film 15 is formed, by using an SiON film having a relative dielectric constant kg of "6". A gate sidewall film 21, consisting of a first side wall insulating film 21a and a second sidewall insulating film 21b is formed on each of the sidewalls of the gate electrode 17. The insulating film 21a, adjacent to the gate electrode 17, is formed using an SiN film having a relative dielectric constant ks of "7.8". Also, the insulating film 21a is formed so as to have a sidewall length Ls of 3.5-8.5 nm, capable of reducing the parasitic resistance at gate/source ends. <P>COPYRIGHT: (C)2007,JPO&INPIT |
