SEMICONDUCTOR DEVICE WITH SYMMETRICAL STEP GATE

摘要

A semiconductor device with a step gate of a symmetrical structure is provided to greatly increase a channel length of a channel region by making the lateral surface and the upper surface of a protruding second region covered with a step gate while the step gate comes in contact with the upper surface and the lateral surface of the protruding second region. A semiconductor substrate(21) is prepared whose surface is defined by an SNC node and a BLC node. A channel region protrudes from the surface of the semiconductor substrate. The lateral surface and the upper part of the channel region are covered with a step gate. The channel region is a boundary region between the BLC node and the SNC node.