Reverse-conduction insulated gate bipolar transistor (IGBT) has semiconductor body that has cell region formed with n-type areas and p-type areas, in which portions between n-type and p-type areas are formed with different minimum distances

摘要

An IGBT has a semiconductor body formed with a cell region and a boundary region. The cell region includes a p-type drive zone (13), a body area (10), a channel area (12), and a gate electrode (11) formed at the front. N-type areas (2) and p-type areas (4,5) are formed at the back of the cell region. The minimum distance between the p-type area (5) and n-type area is set larger than the distance between the p-type area (4) and n-type area (2).