LIGHT-EMITTING DEVICE, METHOD FOR MAKING THE SAME, AND NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

A light emitting device is provided to improve light extraction efficiency, by using a nitride semiconductor substrate with high conductivity, by forming a groove in the irradiation surface of light while a surface treatment for smoothing is performed on the surface having the groove and by down-mounting one side of a p-type nitride semiconductor layer. One side of a p-type nitride semiconductor layer is down-mounted in a light emitting device wherein light is emitted from a second main surface(1a) opposite to a first main surface of a nitride semiconductor substrate. Grooves(80) are formed in the second main surface of the nitride semiconductor substrate. A surface treatment is performed on the inner circumferential surface of the grooves to smooth the inner circumferential surface. The groove has a depth of 50~300 micrometers. A portion of the nitride semiconductor substrate in which the groove is not formed has a thickness of 100~600 micrometers in a thickness direction of the nitride semiconductor substrate.