发明名称 |
Method for fabricating a short channel field-effect transistor |
摘要 |
A method for fabricating a short channel field-effect transistor is presented. A sublithographic gate sacrificial layer is formed, as are spacers at the side walls of the gate sacrificial layer. The gate sacrificial layer is removed to form a gate recess and a gate dielectric and a control layer are formed in the gate recess. The result is a short channel field-effect transistor with minimal fluctuations in the critical dimensions in a range below 100 nanometers.
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申请公布号 |
US7129152(B2) |
申请公布日期 |
2006.10.31 |
申请号 |
US20050520743 |
申请日期 |
2005.08.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FEHLHABER RODGER;TEWS HELMUT |
分类号 |
H01L21/338;H01L29/423;H01L21/28;H01L21/336;H01L21/8234;H01L27/088;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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