| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a compound single crystal through an LEC (liquid encapsulated Czochralski) method, whereby a solid-liquid interface can be controlled to be convexly curved toward a melt, even when growing a large-diameter single crystal. SOLUTION: A ring-shaped under-crucible heater 10 is placed below the peripheral side of a bottom wall of a crucible 7, and its heater surface is slanted off the horizontal plane so that it faces the bottom side of a crucible sidewall 7a. The crucible side wall is heated by the under-crucible heater 10 via the crucible bottom wall to form a large natural convection S of a GaAs melt 6 that rises near the crucible wall and flows toward a growing GaAs single crystal 3. The natural convection S overcomes a forced convection formed near the solid-liquid interface by a relative rotation of the GaAs single crystal 3 and the crucible 7 and becomes the dominant convection in the GaAs melt 6, which enables the solid-liquid interface to be convexly curved toward the GaAs melt 6. COPYRIGHT: (C)2007,JPO&INPIT
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