发明名称 |
ROLL-VORTEX PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM |
摘要 |
A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.
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申请公布号 |
US2006236933(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20060420429 |
申请日期 |
2006.05.25 |
申请人 |
KESHNER MARVIN S;JACKSON WARREN B;NAUKA KRZYSZTOF |
发明人 |
KESHNER MARVIN S.;JACKSON WARREN B.;NAUKA KRZYSZTOF |
分类号 |
C23C16/00;C23C16/44;C23C16/455;C23C16/509;H01J37/32 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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