发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR CHIPS |
摘要 |
By forming dividing-groove portions in accordance with dividing regions on the second surface of a semiconductor wafer where an insulating film is placed in the dividing regions of the first surface and performing etching of the entire second surface and the surfaces of the dividing-groove portions by performing plasma etching from the second surface, corner portions on the second surface side are removed, while the insulating film is exposed from the etching bottom portion by removing the dividing-groove portions in the dividing regions. And by continuously performing the plasma etching in a state in which the exposed insulating film is surface charged with electric charge due to ions in plasma, corner portions on the first surface side put in contact with the insulating film are removed, and semiconductor chips that have a high transverse rupture strength are provided. |
申请公布号 |
WO2006112524(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
WO2006JP308479 |
申请日期 |
2006.04.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;ARITA, KIYOSHI;NAKAGAWA, AKIRA |
发明人 |
ARITA, KIYOSHI;NAKAGAWA, AKIRA |
分类号 |
H01L21/78;H01L21/3065;H01L21/68 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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