| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element in which power consumption of the light emitting element can be reduced without lowering emission intensity, and to provide its fabrication process and a GaN substrate. <P>SOLUTION: An LED multilayer structure 50 comprises a GaN substrate 1 having one major surface 1a composed of an N face and the other major surface 1b composed of an Ga face, an inversion layer 10 formed on one major surface 1a or the other major surface 1a side of the GaN substrate 1, a GaN regrowth layer 11 formed contiguously to the surface 10a of the inversion layer 10 and having a surface 11a composed of an Ga face, an n-electrode 9b formed contiguously to the surface 11a of the GaN regrowth layer 11 and connected electrically with the GaN substrate 1, and a light emitting layer 4 formed on the other major surface 1b side of the GaN substrate 1 and emitting light through injection of current. <P>COPYRIGHT: (C)2007,JPO&INPIT |
