发明名称 CUTTING METHOD OF WAFER
摘要 PROBLEM TO BE SOLVED: To cut a wafer having rear surface coated with metal into individual devices by plasma etching. SOLUTION: When a wafer having a surface where a plurality of devices are formed while being sectioned by scheduled separation lines and a rear surface coated with a metal film is divided into individual devices by separating the scheduled separation lines, a part of the metal film applied to the rear surface of the wafer in a separating region corresponding to the scheduled separation lines formed on the wafer surface is subjected to machining. After the metal film is removed and the separating region is exposed, plasma etching is performed from the exposed separating region and the wafer is divided into individual devices by separating the scheduled separation lines. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006294913(A) 申请公布日期 2006.10.26
申请号 JP20050114528 申请日期 2005.04.12
申请人 DISCO ABRASIVE SYST LTD 发明人 SEKIYA KAZUMA
分类号 H01L21/301;H01L21/3065 主分类号 H01L21/301
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