发明名称 MULTI-PORT MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a multi-port memory device capable of preventing an initial high data discrimination error at the time of initial operation in a global data bus transmitting/receiving structure of a current sensor system at the time of transmitting low data, and also to provide a multi-port memory device capable of transmitting a data faster. SOLUTION: The multi-port memory device has the data transmitting/receiving structure of the current sensor system and includes a data transmitting/receiving block for exchanging a data with the global data bus, wherein the global data bus is prevented from being in a saturated charged state at the time of discriminating the initial data, by terminating the global data bus so that it operates within a specific voltage level range. Thus, not only the initial high data discrimination error can be resolved, but also the global data bus swings restrictedly only within an optimized voltage range, and faster data transmission becomes possible. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006294209(A) 申请公布日期 2006.10.26
申请号 JP20050380672 申请日期 2005.12.29
申请人 HYNIX SEMICONDUCTOR INC 发明人 KIM KYUNG WHAN;LEE JAE JIN
分类号 G11C11/409;G11C11/401 主分类号 G11C11/409
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