CHARGE TRAP TYPE NON-VOLETILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A charge trap type non-volatile memory device and a method for manufacturing the same are provided to improve operation speed and to reduce operation voltage. A semiconductor substrate(100) is provided for a non-volatile memory device with a charge trap type. The semiconductor substrate is used one of a silicon substrate, a silicon on insulator substrate, a germanium substrate, a germanium on insulator substrate, and a silicon germanium substrate. A tunnel oxidation layer(104a) is formed on the semiconductor substrate and includes a silicon oxidation. A charge trap layer is formed on the tunnel oxidation layer and includes a metal oxidation. A blocking dielectric layer is formed on the charge trap layer and includes the metal oxidation. A tantalum carbon nitride pattern is located on the blocking the dielectric layer and is formed by a chemical vapor deposition process. In the chemical vapor deposition process, source gas which includes a tantalum, a nitrogen and a ligand compound.