发明名称 |
Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer |
摘要 |
A metal gate transistor may include a metal layer over a high dielectric constant dielectric layer. The dielectric layer abstracts electronegativity from said metal layer, altering its workfunction. The workfunction of the metal layer may be set to compensate for the dielectric layer abstraction.
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申请公布号 |
US7125762(B2) |
申请公布日期 |
2006.10.24 |
申请号 |
US20040900666 |
申请日期 |
2004.07.28 |
申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;DATTA SUMAN;SHAH UDAY;CHAU ROBERT S. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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