ELECTROSTATIC PROTECTION DEVICE FOR SEMICONDUCTOR CIRCUIT

摘要

An electrostatic protection device for a semiconductor circuit is provided to stably protect an internal circuit by preventing a melting of a wiring due to a current concentration. A plurality of bar type second conductive diffusion regions(420) are formed to be spaced apart from each other in a first conductive substrate(400). A device isolation film(430) is formed at a surface of the substrate to enclose the second conductive diffusion regions. A first conductive diffusion region(410) is formed in a surface of the substrate except for the second conductive diffusion region and the device isolation region. A first wiring(450) is formed at an upper portion of the first conductive diffusion region to contact with the first conductive diffusion region. A second wiring is formed to contact with the second conductive diffusion regions to have a width corresponding to a long direction length of the second conductive diffusion region.