| 发明名称 |
SEMICONDUCTOR DEVICE HAVING MULTILAYER GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device including a doped conductive film formed on the semiconductor substrate. <P>SOLUTION: A diffusion barrier film is formed on the doped conductive film. The diffusion barrier film includes an amorphous semiconductor substance. An ohmic contact film is formed on the diffusion barrier film. A metal barrier film is formed on the ohmic contact film. Due to this, it is possible to effectively prevent impurities doped into the conductor at the lower part of the ohmic contact film while maintaining the boundary face resistance within a desired range and to improve the inversion capacitance characteristic etc. of the semiconductor device employing a multilayer structure. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2006287233(A) |
申请公布日期 |
2006.10.19 |
| 申请号 |
JP20060102013 |
申请日期 |
2006.04.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK JAE-HWA;LEE JANG-HEE;KIN DAIYO;PARK HEE-SOOK |
| 分类号 |
H01L29/423;H01L21/28;H01L21/8238;H01L21/8242;H01L21/8244;H01L21/8247;H01L27/092;H01L27/108;H01L27/11;H01L27/115;H01L29/49;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L29/423 |
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