发明名称 |
Evaluating a multi-layered structure for voids |
摘要 |
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.
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申请公布号 |
US2006232768(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20060454332 |
申请日期 |
2006.06.16 |
申请人 |
BORDEN PETER G;LI JI-PING |
发明人 |
BORDEN PETER G.;LI JI-PING |
分类号 |
G01N21/00;G01N21/88;G01D;G01N21/17;G01N21/21;G01N21/84;G01N21/95;G01R31/26;G01R31/265;H01L21/265;H01L21/4763;H01L21/66 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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