发明名称 BIAS CIRCUIT FOR HIGH FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a bias circuit for a high frequency amplifier capable of obtaining the high frequency power amplifier with favorable distortion characteristics while acquiring high output electric power efficiency. SOLUTION: A transistor 12 for current supply is constituted such that a collector terminal (node N1) is connected with a power supply terminal T3 via a resistance 16, and an emitter terminal (node N2) is used as an output terminal of a bias. If the output electric power of a transistor 111 for high frequency amplification declines, the potential of the node N1 rises so that it may be fed back to a node N3 by a resistance 17 to raise also the potential of the node N3. Thus, the operation of the transistor 111 for high frequency amplification is approached from class B operation to class A operation. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006287773(A) 申请公布日期 2006.10.19
申请号 JP20050107141 申请日期 2005.04.04
申请人 TOSHIBA CORP 发明人 MIWA MAMORU
分类号 H03F1/02 主分类号 H03F1/02
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