发明名称 |
Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
摘要 |
The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.
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申请公布号 |
US7122827(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20030686136 |
申请日期 |
2003.10.15 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ALIZADEH AZAR;SHARMA PRADEEP;LEBOEUF STEVEN FRANCIS;GANTI SURYAPRAKASH;D'EVELYN MARK PHILIP;CONWAY KENNETH ROGER;SANDVIK PETER MICAH;TSAKALAKOS LOUCAS |
分类号 |
H01L29/06;G02B6/122;H01L27/15;H01L33/24;H01S5/183;H01S5/34 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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