发明名称 FLASH MEMORY DEVICE WITH REDUCED ACCESS TIME
摘要 <p>A flash memory device with a reduced access time. The flash memory device executes an error detection and correction operation while encoding or decoding transmission and reception signals with a host apparatus. The flash memory device utilizes a simplified design algorithm and reduces an access time.</p>
申请公布号 KR20060107701(A) 申请公布日期 2006.10.16
申请号 KR20050030053 申请日期 2005.04.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOU, BYOUNG SUNG
分类号 G06F12/00;G11C16/00 主分类号 G06F12/00
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