发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can detect the terminal point of the plasma processing with sufficient accuracy, and to provide a plasma processing method which can raise the quality of the plasma processing. <P>SOLUTION: While impressing voltage to electrode members 12 and 13 disposed opposite to each other from a power supply 7, and generating plasma gas 4a by passing processing gas 4 between these electrodes, a plasma processing apparatus 1 which brings the plasma gas into contact with the surface of a glass substrate 2 as material to be processed so as to perform etching processing is provided with a laser displacement 20 which detects the boundary plane of the glass substrate 2 and a thin film 2a as a base level of the glass substrate 2. During the etching processing, the amount of displacement of a boundary plane is detected from an incidence light 21 and a reflection light 22 which are irradiated from this laser displacement meter, and a terminal point of etching processing is detected based on the variance of a detection value. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278719(A) 申请公布日期 2006.10.12
申请号 JP20050095495 申请日期 2005.03.29
申请人 SEKISUI CHEM CO LTD 发明人 OTSUKA TOSHIHIRO
分类号 H01L21/3065;H05H1/24 主分类号 H01L21/3065
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